CN1 184059A
The preparation method of a luminous powder encapsulating film mainly means that the electroluminescent device made of the luminous powder prepared by using the method does not need to be further encapsulated. Silicon nitride is a transparent material with good chemical stability, thermal stability, and tightness, high dielectric constant and insulation factor, and high breakdown resistance, which can effectively prevent ion migration. Since the temperature of the silicon nitride compound is high (9O0c1:above), the light emission luminance of the light-emitting powder is reduced, so plasma enhanced chemical vapor deposition is used. The plasma has a large energy and a high electron temperature, which enables the synthesis of silicon nitride by silane and ammonia at a relatively low temperature.
The preparation method of a luminous powder encapsulating film mainly means that the electroluminescent device made of the luminous powder prepared by using the method does not need to be further encapsulated. Silicon nitride is a transparent material with good chemical stability, thermal stability, and tightness, high dielectric constant and insulation factor, and high breakdown resistance, which can effectively prevent ion migration. Since the temperature of the silicon nitride compound is high (9O0c1:above), the light emission luminance of the light-emitting powder is reduced, so plasma enhanced chemical vapor deposition is used. The plasma has a large energy and a high electron temperature, which enables the synthesis of silicon nitride by silane and ammonia at a relatively low temperature.
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